Unique simulation software tools for the global semiconductor industry
Submitting Institution
University of GlasgowUnit of Assessment
General EngineeringSummary Impact Type
TechnologicalResearch Subject Area(s)
Physical Sciences: Condensed Matter Physics
Information and Computing Sciences: Artificial Intelligence and Image Processing
Engineering: Electrical and Electronic Engineering
Summary of the impact
The development of unique computer simulation tools has profoundly
influenced the design and manufacture of silicon chips fuelling the $300
billion per year semiconductor industry. A pioneer of statistical
variability research, Professor Asen Asenov developed understanding and
awareness of statistical variability in the nanoscale transistors which
make up all silicon chips. Gold Standard Simulations (GSS) was created in
2010 and by 2012-13 had grown revenue from services and licensing to
$1million. GSS tools are currently used in foundries providing 75% of all
semiconductor production for fabless design companies globally. For
example, working with GSS and their simulation tools has reduced the
development time for IBM's next generation of CMOS technology by 1 year,
representing significant savings in the 3-5 year technology development
cycle.
Underpinning research
The demand for ever more powerful silicon chips has driven continued
miniaturisation of transistors. However, the performance of these devices
is increasingly affected by atomic imperfections in their structure as
they reduce in size. Known as the `Christmas pudding effect', it is
impossible to predict how many dopants, introduced randomly, will end up
in each nanoscale transistor. Dopants are like raisins in the Christmas
pudding — each portion (transistor) has a different number of raisins
(dopants). This problem critically affects the yield of static
random-access memory (SRAM), introduces timing issues in digital circuits,
restricting supply voltage scaling and increases the power dissipation.
SRAM occupies more than 50% of modern silicon chips used in computers,
smartphones and tablets.
Numerical simulations play a key role in understanding statistical
variability of Complementary Metal-Oxide-Semiconductor (CMOS) and in
predicting its impact on future technology generations, with a single chip
containing billions of transistors. CMOS is a technology for constructing
integrated
circuits. Professor Asen Asenov (James Watt Chair in Electrical
Engineering, School of Engineering, 1991-present) was the first person in
the world to research systematically statistical variability in CMOS
transistors and since 1998 has secured over £11million in research funding
to focus on the development of a unique variability simulation toolchain.
This research developed a significant body of work, including IP in the
form of software that led to the formation of spin-out Gold Standard
Simulations (GSS) in 2010.
In 1998, Asenov was approached by NASA, who recognised the problem of
randomness of dopants within transistors. Facilitated by Henry MacDonald
(Director of NASA's Ames Research Center) Asenov and Dr Andrew Brown
(Research Assistant (RA), 1998-2010) were funded to develop tools for
parallel finite element simulation of `atomistic' effects in sub-0.1micron
transistors. The first version of the simulation software was able to
resolve atomic scale effects in nano-CMOS transistors [1]. Scottish Higher
Education Funding Council support continued to support the research
(VIDEOS 1999-2002).
Asenov's Device Modelling Research Group developed `atomistic' Monte
Carlo and NEGF (non-equilibrium Greens function) Quantum Transport
simulators for nano-CMOS devices, capable of modelling all known sources
of intrinsic parameter variations [2-6]. In recognition of Asenov's work,
IBM awarded him the prestigious $1 million Shared University Research
Award `Investigating Intrinsic Fluctuations in Decanano Silicon Devices'
(2001-04). This helped to determine the impact on scaling, device
architecture and circuit performance [4].
Asenov and Binjie Cheng (RA 2002-present) revealed that the variability
within transistors could be quantified and actually utilised in neural
networks to allow efficient training in pattern recognition (EPSRC
GR/R47325/01 2001-05). University College London's expertise in first
principle material simulations was brought in to gain a deeper
understanding of how device atomic structure impacts on the behaviour of
transistors; they provided atomic-scale material simulations, the methods
for which were transferred into Glasgow's device-level simulation code
(EPSRC 2004-08, GR/S80097/01). The development of the tools was also
supported by consecutive EPSRC Platform grants (2003-2007, GR/R89738/01,
2007-2013, EP/E038344/1).
FP6 PULL NANO (2006-08) focused on the development of 32nm technologies
in Europe. Collaborators ST Microelectronics, Infineon and NXP provided
experimental data which facilitated the validation and calibration of the
device simulation tools. The expertise in physical simulation was
translated into compact models (EPSRC EP/E003125/1, 2006-2010). Asenov,
with Professor Scott Roy (Lecturer 1994-2012, Professor of Electronics
2012-present), Dr Campbell Millar (RA 2003-09) and the Universities of
Edinburgh (Prof A. Murray, School of Engineering), Southampton (Prof M.
Zwolinski, Dept of Electronics and Computer Science), York (Prof A
Tyrrell, Dept of Electronics) and Manchester (Prof S. B. Furber, Dept of
Computing Science), developed a new toolset including compact model
extraction and circuit simulations. The resulting software is at the core
of the GSS simulation toolchain. Subsequent FP7 funding allowed
researchers to focus on how statistical variability impacts on design
(REALITY 2008-10). Using industrial data from ST Microelectronics, the
predictive capabilities and accuracy of the tools were demonstrated. The
toolchain allows the generic optimisation of SRAM.
Further research and commercially focused development were carried out
through the EU Electronic Numerical Integrator And Computer (ENIAC)
project MODERN (2009-12). During this project GSS was formed to
commercially deliver simulation tools to the ENIAC partners. Collaborative
EU projects have been important in the ongoing University research and the
development of the GSS tools. Working with key industry partners, the
tools have been applied to new applications:
- TRAMS (2010-13) with Intel where University/GSS technology was used
for first time to simulate FinFETs (multi-gate or tri-gate
architectures);
- MOERDRED (2010-14) with Infinion where statistical reliability was
introduced in the University/GSS tools;
- SUPERTHEME (2012-15) with Austria Microsytems (AMS) where the
University/GSS technology has been adopted for analogue design.
References to the research
1. A. Asenov, Random dopant induced threshold voltage lowering and
fluctuations in sub 0.1 micron MOSFETs: A 3D `atomistic' simulation study,
IEEE Transactions on Electron Devices, vol. 45, no. 12, pp
2505-2513 (1998). (doi:10.1109/16.735728).
Single authored paper cited 415 times (average number of citations in the
field 2). The relevance of the paper is increasing with time according to
the yearly citation count. *
2. A. Asenov, A. R. Brown J. H. Davies, S. Kaya†, and G.
Slavcheva, Simulation of Intrinsic Parameter Fluctuations in Decananometre
and Nanometre scale MOSFETs, IEEE Transactions on Electron Devices,
vol. 50, pp. 1837-1852 (2003).
(doi:10.1109/TED.2003.815862).
Invited paper 367 citations. *
3. A. Asenov, S. Kaya and A. R. Brown, Intrinsic Parameter Fluctuations
in Decananometre MOSFETs Introduced by Gate Line Edge Roughness, IEEE
Transactions on Electron Devices, vol. 50, pp. 1254-1260 (2003).
(doi:10.1109/TED.2003.813457).
307 citations. *
4. G. Roy, A. R. Brown, F. Adamu-Lema, S. Roy and A. Asenov, Simulation
Study of Individual and Combined Sources of Intrinsic Parameter
Fluctuations in Conventional Nano-MOSFETs, IEEE Transactions on
Electron Devices, vol. 52, pp. 3063-3070 (2006).
(doi:10.1109/TED.2006.885683).
167 citations.
5. A. Asenov, G. Slavcheva, A.R. Brown, J.H. Davies and S. Saini,
Increase in the random dopant induced threshold fluctuations and lowering
in sub-100 nm MOSFETs due to quantum effects: A 3-D density-gradient
simulation study, IEEE Transactions on Electron Devices, vol. 48,
pp. 722-729, (2001). (doi:10.1109/16.915703).
200 citations.
6. A. Asenov, S. Kaya, J. H. Davies, Intrinsic Threshold Voltage
Fluctuations in Decanano MOSFETs due to Local Oxide Thickness Variations,
IEEE Transactions on Electron Devices, vol. 49, pp. 112-119 (2002).
(doi:10.1109/16.974757).
153 citations.
* best indicators of research quality
Details of the impact
Pioneering research led by Asenov and the Device Modelling Group has had
major impacts on the global semiconductor industry by (i) developing
understanding and awareness of the challenge of statistical variability;
and (ii) providing economic impacts through the development of a novel
software toolchain commercialised through spin-out company Gold Standard
Simulations.
Developing understanding and awareness of the challenge of statistical
variability
When Asenov first discussed the issue of statistical variability with the
global semiconductor industry in the late 1990s, it was generally believed
that transistors were sufficiently large that this would not affect
performance. However, the drive for miniaturisation of semiconductor
devices has revealed that statistical variability is absolutely critical
to the performance of silicon chips. Asenov was the first to
systematically explore the problem of statistical variability and the
ramifications for the world's electronics industry. His findings and
opinions expressed through invited talks at international conferences (66
appearances since 2008), training courses run in Silicon Valley, key
professional journals and the media have shaped understanding and
awareness and have influenced practices in the $300 billion per year
semiconductor industry.
Providing economic impacts through the development of a novel software
toolchain
Asenov's Device Modelling Group developed one of the first integrated
simulators of variability for Complementary Metal-Oxide-Semiconductor
(CMOS) devices and processes, building a unique variability simulation
software toolchain. From 2007-12 Asenov's EPSRC funded research was
closely aligned to industry demands (collaborators included key figures in
the semiconductor industry, such as STMicroelectronics, Infineon and NXP).
Working with Synopsis Inc he developed interfaces for the Glasgow
simulation tools.
Asenov and Millar joined Gold Standard Simulations (GSS) as CEO
and COO when it was spun out of the University of Glasgow in 2010 with
support from Scottish Enterprise and EPSRC. The EU Electronic Numerical
Integrator And Computer (ENIAC) project `Modelling and Design of Reliable
process variation-aware nanoelectronic devices, circuits and systems'
(2009-12) was the catalyst for the formation GSS as a vehicle to
commercially deliver simulation tools to ENIAC partners. GSS is the first
and only company to provide a fully integrated service and toolchain
allowing device/circuit co-design and assessment of contemporary and
future CMOS technology options. GSS employs 8 people and in 2012-13
secured $1m in revenue. GSS have licenced their tools to major foundries
and have evaluation licences in place with others.
In 2010 IBM engaged with GSS to investigate the `shape' of the next
FinFET (14nm) generation CMOS technology. A Senior Researcher at IBM
stated:
"GSS and University researchers developed a range of memory device
scenarios, promptly rejecting low yield designs, and avoiding the time
and expense of trying numerous memory topologies in hardware. This
project saved at least one year in the memory development process, which
is quite a significant part of the 3-5 year technology development
cycle. The results of the pathfinding work that IBM has done with GSS
will naturally be shared with and directly benefit IBM's technology
platform partners like Samsung and Global Foundries. Globally investment
in semiconductor R&D is reducing so it is important that Prof.
Asenov continues to blaze a trail to allow the few companies moving
forward to the next semiconductor node to be able to continue their
efforts. The biggest indicator of the benefits of the GSS expertise and
tools is that IBM is undertaking an assessment of the tools with a view
to licensing the GSS technology."
The GSS expertise and toolset is allowing integrated device
manufacturers, foundries and fabless design companies across Europe, the
Far East and the USA to gain significant competitive advantage over their
competitors by reducing time to market, avoiding overdesign, increasing
yield and de-risking the expensive chip design process. GSS tools provide
designers with the benefit of `seeing into the future' to determine which
circuits will work optimally in new devices, thus eliminating the expense
of fabricating in silicon at the design stage. Time savings equate to
significant cost saving given that recent estimates state that the next
generation of semiconductors will cost $10-20bn to create.
GSS have also supported the development of Yorkshire based start-up
SureCore Ltd, providing crucial knowledge and training on statistical
variability. SureCore successfully combined their own circuit and system
design knowledge with the device modelling expertise of GSS. SureCore's
partnership with GSS has enabled the company to develop variability
tolerant SRAM, resulting in leading edge memory solutions that consume
less than half the power of comparable memories — key to reducing battery
requirements for mobile devices. GSS have strengthened SureCore's
credibility within the market and enabled them to substantially develop
their business. In 2013 a University of York spin-out, Ngenics, also
licenced the GSS tools to strengthen their business.
Sources to corroborate the impact
- Statement from VP Business Development, Gold Standard Simulations Ltd.
(on role of the University of Glasgow in the formation of GSS)
- Senior Technical Staff, IBM (on impact of University of Glasgow and
GSS tools on IBM R&D) (contact details and statement provided)
- CEO, SureCore Ltd (on role of GSS in development of SureCore) (contact
details provided)
Media Coverage (demonstrating University of Glasgow led industry
awareness and dialogue):