N-in-P radiation-hard sensors for the Large Hadron Collider
Submitting Institution
University of LiverpoolUnit of Assessment
PhysicsSummary Impact Type
TechnologicalResearch Subject Area(s)
Physical Sciences: Other Physical Sciences
Summary of the impact
Radiation hardness is key for sensors used in many nuclear medicine,
space and defence applications, and for nuclear reactor monitoring and
fuel handling. It is vital to academic research in the high particle
fluence environments found in particle and nuclear physics. At Liverpool,
the development of novel radiation-hard silicon sensor technologies was
driven by sensor requirements at the LHC. This research has led to the
adoption of n-implant in p-type planar silicon (n-in-p) sensors in the
wider research community and by commercial suppliers of sensing devices
including Micron Semiconductor and e2v (UK), Hamamatsu Photonics (Japan),
CNM (Spain) and FBK (Italy).
Underpinning research
Researchers at Liverpool were among the first to propose n-dopant
implanted read-out to achieve greater radiation hardness in
high-resistivity silicon strip detectors. Through the PhD thesis project
of a CASE student (Moshe Hanlon, 1999) with Micron Semiconductor (UK) Ltd,
we explored the possibility of producing such sensors with single-sided
processing by starting with a p-type substrate (up to this point the
detectors provided to nuclear physics, particle physics, space science,
astrophysics and medical physics had been based on very high resistivity
n-type silicon substrates). Full-size (10 cm × 10 cm) detectors were
designed at Liverpool and produced in this n-in-p technology with Micron,
e2V and Hamamatsu. Detailed characterisation work on post-irradiation
performance was led by Liverpool internationally resulting in 30 Liverpool
journal publications in this area.
The international success of the Liverpool group in detector development
has depended on the unique facilities of the (STFC funded) Liverpool
Semiconductor Detector Centre. Through this, we have continued to play a
leading role in the development of these technologies with refinement of
the p-type structures and deeper understanding of the fundamental device
physics that explains the post-irradiation properties. As part of our
recognition for developing this technology, one of our team members, Dr
Gianluigi Casse, currently leads the RD50 collaboration at CERN (Radiation
Hard Sensors for the LHC) of over 300 scientists, while another, Professor
Phil Allport, is Upgrade Coordinator of the 3000 strong ATLAS Experiment
on the LHC.
This research has led the two main LHC experiments, ATLAS and CMS (the
world's largest scientific experiments), to adopt n-in-p as their baseline
technology for the major (~£200M component costs) tracker upgrade
programmes required for the HL-LHC. The Liverpool group also built the
first 40 full size LHC n-in-p modules for the international ATLAS tracker
upgrade prototyping programme and, in 2012, completed the build of an
entire n-in-p Vertex Detector for another LHC experiment, LHCb, the first
complete detector system of its kind in the world.
References to the research
1. P.P. Allport, "Silicon strip detector designs for the ATLAS
experiment." Nucl. Instrum. Meth. A386 (1997) 109-116. DOI: 10.1016/S0168-9002(96)01103-5
2. G. Casse et al. "First results on charge collection efficiency of
heavily irradiated microstrip sensors fabricated on oxygenated p-type
silicon" Nucl. Instrum. Meth. A518 (2003) 340-342. DOI: 10.1016/j.nima.2003.11.015
3. G. Casse, "Radiation hardness of p-type silicon detectors." Nucl.
Instrum. Meth. A612 (2010) 464-469. DOI: 10.1016/j.nima.2009.08.050
4. A Affolder et al. "Charge collection efficiency measurements of
heavily irradiated segmented n-in-p and p-in-n silicon detectors for use
at the super-LHC", IEEE Trans. Nucl. Sci. 56, 765-770 (2009). DOI: 10.1109/TNS.2009.2012856
5. G. Casse et al. "Study of the response to minimum ionising particles
of microstrip detectors made with float zone and magnetic Czochralski
silicon after neutron irradiation", Nucl. Instrum. Meth. A598,
671-674 (2009). 10.1016/j.nima.2008.09.048
6. G. Casse et al. "Comparison of charge collection efficiency of
segmented silicon detectors made with FZ and MCz p-type silicon
substrates", Nucl. Instrum. Meth. A591 (2008) 178-180. DOI: 10.1016/j.nima.2008.03.090
Research funding:
1. Research funded through The University of Liverpool, Department of
Physics Particle Physics Rolling Grant, STFC, ST/F007469/1, End 9/12,
(£5,357,268), PI: P. Allport
2. Junction engineering of microstrip silicon sensors to operate in
controlled charge multiplication mode for enhanced radiation tolerance ,
STFC, ST/H003924/1, End 6/14, (£75,256), PI: G. Casse
Details of the impact
Silicon Providers
Liverpool's contribution to developing and modelling the intrinsic
devices has made them a cheap, stable and reliable commercial technology.
Typical costs are less than 20% more than those for non-radiation-hard
devices. The number of international companies and research facilities now
able to offer p-type sensors for high radiation environments has grown to
8, including the world's largest supplier Hamamatsu Photonics (Japan) and
now 2 UK companies (Micron and e2v Technologies Ltd). From 2008 onwards,
this research was continued as part of the Liverpool STFC Rolling Grant.
Suppliers such as Micron Semiconductor Ltd (MSL) and e2v supply to many
markets from medical applications to space and defence, but often the new
product lines are first developed to meet the exacting requirements of
fields such as particle physics. This has been particularly true for MSL,
where the company Director writes in his supporting letter that their
collaboration with Liverpool "...has proven and continues to be, of
great benefit to expanding commercial activities, particularly in
Asia..." On radiation-hard developments such as n-in-p, introduction
of interstitial oxygen, and guard-ring optimisation for post-irradiation
high-voltage operation, he writes: "Since 2008, the establishment of
P-type substrate technology, which has relied on MSL fabrication and
process engineers working closely with Liverpool's device expertise, has
established MSL's pixel and strip offerings as the most
radiation-tolerant in the world. These devices represent more than 30%
of MSL's business, and the technological edge over competitors permits
bids and results in major contracts, both in the UK and worldwide".
MSL has an annual turnover in excess of $5 million and "...is the UK's
leading radiation sensor specialist and provides a wide range of
products for applications in scientific laboratories, the nuclear
industry and aerospace and defence applications, and is a qualified
supplier for ESA and NASA to both H- and K-level standards."
In addition, Liverpool has contributed to designs available from other
international companies (Hamamatsu Photonics, and CNM) who now provide
p-type sensors as part of their catalogue. With CNM, we also provide the
mask designs for the different prototype devices developed for studies of
performance after extreme neutron and proton irradiation.
We helped e2v develop this technology with Liverpool mask designs through
a joint industry-academia grant (ST/F011571/1 with £327k to Liverpool)
leading a joint publication with e2v. We have also held CASE studentships
with e2v and Hamamatsu (UK) as well as with MSL.
In the case of MSL (supplying mostly to the nuclear industry, space and
defence) their chief detector designer, Dr. Susanne Walsh, was trained in
the use of the CAD packages needed for sensor mask layout during an 8
month placement at Liverpool and continues to work closely with our design
experts. Dr Walsh does all the company's in-house sensor design.
Other Impact
The building of the LHCb n-in-p VELO 2008-2012 was done based on the
n-in-p research, but required electronics expertise across a broad range
of UK industry including Hawk Electronics and Stevenage Circuits. The
technologies developed that were ancillary to the n-in-p sensors, but
nonetheless vital to completing the instrumentation, included the
precision, low-thermal impact component mounting by Hawk Electronics, who
won a NW Industry award for their work with Liverpool in 2008 and the
circuit layout and design by Liverpool of high-tech hybrids (that hold the
sensors) by Stevenage Circuits. On the back of this research, Hawk has now
been enabled to bid for EC contracts and Stevenage Circuits has added
thermal management to part of its product range of hybrids. Both are
involved heavily in the ATLAS tracker upgrade prototyping efforts for the
HL-LHC at Liverpool with the prospect for bidding for major future
contracts.
The detectors designed by Liverpool for the LHC now form the basis of a
major new initiative in proton therapy instrumentation which recently
received a £1.6 million Translation Award from the Wellcome Trust. Here,
radiation hardness is key to long-term operation in the proton beam.
Sources to corroborate the impact
- The Managing Director of Micron Semiconductor has provided a letter of
support to corroborate that they have collaborated closely on R&D
with Liverpool University for over 20 years and that this relationship
continues to be of great benefit to them.
- The Leader of the Radiation Detectors Group CSIC and
Technology Area Coordinator at Centro Nacional de Microelectrónica has
provided a letter of support to corroborate that their links with
Liverpool University and RD50 have led to new products for use in high
radiation environments.
- The Managing Director of Hamamatsu Photonics UK Ltd has provided a
letter of support to corroborate the value they attach to their
collaboration with Liverpool University.
- The Director of Hawk Electronics has provided a letter of support to
corroborate that their work with Liverpool University helps build and
maintain their high-tech skills base.