Enabling Zyvex Labs to develop atomically precise manufacturing processes
Submitting Institution
University College LondonUnit of Assessment
PhysicsSummary Impact Type
TechnologicalResearch Subject Area(s)
Chemical Sciences: Inorganic Chemistry, Physical Chemistry (incl. Structural), Theoretical and Computational Chemistry
Summary of the impact
The underpinning research involved modelling the diffusion of hydrogen on
silicon surfaces, and the electronic structure of dopant atoms on silicon
surfaces. This data was used to inform, guide and develop the atomically
precise manufacturing processes of Zyvex Labs. These processes remove
hydrogen atoms from a silicon surface to create patterns with atomic
precision for later overgrowth. As a result of the UCL research, Zyvex
Labs has already obtained funding of $14 million, several jobs have been
created, and at least two products are being brought to market.
Underpinning research
Techniques for atomically precise manufacturing (APM) — the fabrication
of structures with the precision of one atom — are of interest to
industry. APM will enable industry to develop new technology ranging from
simple quantum dots and atomically accurate metrology standards, to
devices for the harvesting and storage of energy and for medical
applications. One method of achieving APM involves the growth of
structures on the Si(001) surface. A layer of hydrogen on this surface
acts as a mask against deposition of further material, so selective
removal of hydrogen atoms from the layer enables the selective deposition
of new material such as silicon and germanium, as well as dopant atoms for
quantum computing devices. The process becomes more complicated, however,
if elevated temperatures are required for growth of the new material,
since this can also cause hydrogen to diffuse about the surface, reducing
the efficiency of the method. The behaviour of hydrogen on the Si(001)
surface has therefore become an area of considerable importance, both
industrially and academically.
UCL research into the behaviour of hydrogen on Si surfaces has been
conducted by David Bowler who joined the Department of Physics and
Astronomy at UCL in July 1998. This research was part of a collaboration
that started whilst Bowler was at Oxford University and continued when he
moved to Keele University and then to UCL. The first key UCL contribution
(1998-2000) was part of an extensive joint experimental-theoretical
investigation with Oxford University of the behaviour of hydrogen on
Si(001) under various conditions [1]. In this work, researchers from
Oxford University conducted the experimental work, which consisted of
elevated-temperature scanning tunnelling microscope (STM) measurements of
hydrogen mobility, and UCL's Bowler conducted the theoretical work, which
involved modelling the diffusion barrier for hydrogen on Si(001), both on
the perfect surface and near step edges and defects. This modelling of
hydrogen diffusion gave a comprehensive picture of the energy surface,
including the diffusion barriers and the associated temperatures at which
hydrogen becomes mobile.
The next contribution (2001-2003) was performed entirely at UCL and was
relevant both to diffusion of hydrogen and growth of new silicon on
Si(001) [2]. This research involved modelling the formation of new Si
dimers during growth and hydrogen diffusion associated with this process.
Later research (2010-2012) performed by PDRA Veronika Brazdova and
supervised by Bowler consisted of modelling the electronic structure of
Si(110) [3], and understanding the diffusion of hydrogen on Si(110) [4]
and around a Si(001)/Si(110) corner. The key findings of this research
[1-4] hat underpinned the impact were the diffusion barriers for hydrogen
on silicon surfaces, both on the perfect surface and near defects and
steps.
More recently, UCL researchers have studied the effects of physical
structure on the electronic structure of dopant atoms on silicon surfaces
[5, 6]. The research involved STM experiments and density functional
theory (DFT) modelling of dopants on Si(111) [5] and Si(001) [6], and was
performed from 2009 to 2013 entirely within UCL. The effect of the
physical structure of the dopants on their electronic properties has been
found to lead to very different properties to the standard bulk behaviour:
on Si(111), Bi has been found to act as both an electron donor and an
electron acceptor, while on Si(001), Bi has been found to form a
spin-polarised, local state when coupled with a vacancy. These properties
have major implications for the design and construction of quantum
information devices built using APM, dopant atoms and silicon surfaces.
Key UCL researchers: David Bowler (PDRA 1998-1999; EPSRC
Postdoctoral Fellow 1999-2001; Royal Society University Research Fellow
2001-2009; Lecturer 2002-2006; Reader 2006-present), Veronika Brazdova
(PDRA 2006-present) and the UCL STM experimental group (K. Iwaya, P.
Studer, S.R. Schofield, C. F. Hirjibehedin and G. Aeppli).
References to the research
[1] An experimental-theoretical study of the behaviour of hydrogen on the
Si(001) surface, D. R. Bowler, J. H. G. Owen, C. M. Goringe, K. Miki and
G. A. D. Briggs, J. Phys.: Condens. Matter, 12, 7655-7670 (2000)
doi: 10.1088/0953-8984/12/35/301
[2] Formation of clean Si dimers during gas-source growth of Si(001), D.
R. Bowler, Phys. Rev. B, 67, 115341 (2003) doi: 10.1103/PhysRevB.67.115341
[3] Electronic structure of Si(110)-(16x2) studied by scanning tunneling
spectroscopy and density functional theory, M. Setvin, V. Brazdova, D. R.
Bowler, K. Tomatsu, K. Nakatsuji, F. Komori and K. Miki, Phys. Rev. B,
84, 115317 (2011) doi: 10.1103/PhysRevB.84.115317
[4] H atom adsorption and diffusion on Si(110)-(1x1) and (2x1) surfaces,
V. Brazdova and D. R. Bowler, Phys. Chem. Chem. Phys., 13,
11367-11372 (2011) doi: 10.1039/C1CP20108E
[5] Site-dependent ambipolar charge states induced by group V atoms in a
silicon surface, P. Studer, V. Brazdova, S. R. Schofield, D. R. Bowler, C.
F. Hirjibehedin and N. J. Curson, ACS Nano, 6, 10456 (2012) doi: 10.1021/nn3039484
[6] Half-filled orbital and unconventional geometry of a common dopant in
Si(001), K. Iwaya, D. R. Bowler, V. Brazdova, A. Ferreira da Silva, C.
Renner, W. Wu, A. J. Fisher, A. M. Stoneham and G. Aeppli, Phys. Rev.
B, 88, 035440 (2013) doi: 10.1103/PhysRevB.88.035440
References [5], [1], and [3] best indicate the quality of the
underpinning research.
Relevant research grant:
(i) Si(110): (16x2) Reconstruction and Adatom Diffusion, EPSRC, January
2009-June 2010, PI: David Bowler, £140,000
Details of the impact
Zyvex Labs is a leading company in the area of APM in the US. It is part
of Zyvex Corporation, which carries out fundamental research into APM,
often building its own tools. Zyvex now takes that technology to market by
developing commercial products in the nanomaterials and nanomanipulation
areas. The company has already developed a system that is in wide use
throughout the semiconductor industry (a nanoprobe, used to characterise
chips at 90nm and below); the UCL research has underpinned development of
a new system to be brought to market around 2015. It has also helped
generate new employment and $14 million in funding for the company [A].
Zyvex Labs is developing techniques to create nanoscale patterns with
atomic precision by manipulating hydrogen on Si(001), and then growing new
material on top of the patterns. The company is developing products for
market based on this patterning: control electronics for STMs, to allow
patterning; and turn-key systems to be added to STMs, to give a complete
patterning and growth system. Both of these systems will allow other
companies to produce patterns in hydrogen-terminated Si(001) and grow new
materials within the patterns.
While developing early ideas for APM based on hydrogen lithography and
subsequent growth, the President (at the time Chief Technical Officer
followed by Vice President) of Zyvex Labs realised the importance of
theoretical underpinning for the process. He writes, "I did an extensive
literature search on the subject. Your theoretical work stood out as the
best available data and in excellent agreement with the published
experimental data" [A]. Zyvex Labs and UCL set up a collaboration, under a
non-disclosure agreement, in May 2007.
UCL's data on hydrogen diffusion and epitaxial growth of silicon improved
Zyvex Labs' development process by giving important limits on the
atomically precise process being developed: during the early stages of
development, in early 2008, it indicated that the approach was feasible;
later, it was used to identify the temperatures at which hydrogen becomes
mobile, which were used to control and manage the growth processes [A].
This last point is particularly important: the growth of new silicon
requires elevated temperatures, and so the atomically precise control
would be impossible without UCL's data on the temperatures at which the
hydrogen mask would degrade. The UCL research findings in section 2 were
therefore used to set maximum annealing and growth temperatures for the
APM process, to ensure fidelity of patterns. As Zyvex Labs' entire process
and hence product relies on control of the position of the atoms on the
surface, the UCL results underpin its approach, and hence the products
that are being brought to market. The President writes: "Further, your
research on hydrogen mobility on silicon and epitaxial growth of silicon
is still very relevant and is referenced on a very regular basis as we are
carrying out this research" [A].
In addition to underpinning Zyvex Labs' approach, the UCL research has
helped the consortium led by Zyvex Labs to obtain just over $14 million in
funding between January 2008 and July 2013 [A]. This consists of two
research contracts from the US Defense Advanced Research Projects Agency
and a matching grant from the State of Texas, awarded to enable the
accelerated commercialisation and market adoption of atomically precise
devices and manufacturing approaches. These contracts started in August
2008 and have resulted in the hiring of at least five new employees at
Zyvex Labs, including one of the original experimentalists from Oxford
[A]. The UCL research underpinned the funding as it enabled Zyvex Labs'
development of atomically precise processes, which in turn allowed the
contracts to be awarded. The President of Zyvex Labs writes that UCL's
"work on the mobility of hydrogen on silicon surfaces has been enormously
influential on the research at Zyvex Labs and the funding of that
research" and that the funding was "made possible in no small measure by
your research" [A].
In 2013, UCL research has also been informing the approaches used by
Zyvex Labs in a new area: the development of manufacturing techniques for
quantum computing devices. This process will use hydrogen depassivation to
deposit dopant atoms with atomic precision, and Zyvex Labs is using the
recent UCL research on the electronic structure of dopants on silicon
surfaces to understand the effects of physical structure on dopant
properties and hence to design the devices [A]. [text removed for
publication]
Sources to corroborate the impact
[A] Correspondence from the President of Zyvex Labs — corroborates all
claims about the impact of UCL research on Zyvex Labs, including the use
of UCL research findings in the development of techniques, the amount of
funding received and the generation of new employment. Available on
request.