Surrey NanoSystems: Meeting the International Technology Roadmap for Semiconductors
Submitting Institution
University of SurreyUnit of Assessment
Electrical and Electronic Engineering, Metallurgy and MaterialsSummary Impact Type
TechnologicalResearch Subject Area(s)
Chemical Sciences: Macromolecular and Materials Chemistry, Other Chemical Sciences
Engineering: Materials Engineering
Summary of the impact
Surrey Spin-out Surrey Nano Systems (SNS) is a business based around key
patents resulting from the work of Prof. Ravi Silva and his team. SNS has
raised over £11M from investors who have scrutinised the technology and
recognise its value. The business develops technologies for
low-substrate-temperature growth of carbon nanotubes (CNTs) and for novel
low-k dielectric materials both of which align with the
International Technology Roadmap for Semiconductors (ITRS). SNS is working
closely with multinational leaders and has attracted a team that includes
senior management experience of selling into the semiconductor process
equipment market.
Underpinning research
In a highly-interactive, multi-disciplinary research environment there is
rarely a simple, linear relationship between a single research programme
and a high-impact outcome. In this case, the primary initiating research
was a MOD contract placed through BAe Systems (Sowerby, Bristol) in
1997/8. Surrey's research team (led by Prof. Silva) were carrying out
research on stealth materials and high emissivity surfaces. This led to
the development of new techniques for the production of thin-film carbon
coatings [1].
The key inventive step was that the team recognised that the use of
heating from above the substrate together with an engineered surface layer
allowed high temperature carbon CVD growth processes with the bulk
substrate kept at low temperature [2-5]. This recognition resulted from
previous experience in rapid thermal annealing process development, with
the heat being delivered by an array of halogen lamps. This process is now
known as Photo-Thermal Chemical Vapour Deposition (PTCVD) [3,5].
It was apparent that this new technique could address a key challenge in
the application of carbon nanotubes in the production of integrated
circuits, specifically in advanced CMOS. Carbon nanotubes (CNTs) have
well-understood advantages, particularly as interlayer vias, but were not
hitherto grown at sufficient quality at process temperatures that CMOS
devices can withstand.
In the course of developing the CNT growth process it was discovered that
a new polymer material could be deposited using the same essential CVD
process. This polymer was found to have very low dielectric constant,
capable of meeting a further need of the advanced CMOS industry [6].
The research work (2001-5) has resulted in the filing of multiple
patents, often in conjunction with industrial collaborators. Subsequent to
patent filings, papers were published in high impact journals including
Nature Materials [3,5].
Recognising the significant commercial potential of both aspects of this
work the team partnered with the then Regional Development Agency SEEDA to
spin-out these elements of the research through the formation of Surrey
NanoSystems Ltd (2008). Research activity has continued to support this
spin-out business. SNS initially operated as a supplier of PTCVD and
allied growth equipment to the global research community. Following
second-round venture funding the business re-aligned to the exploitation
of the process knowledge directly to semiconductor majors.
Further research themes have developed from this work. Current
commercially-funded activity includes the development of a
moisture-barrier coating, initially for satellite components, but having
potential for future application in encapsulation of organic semiconductor
devices. The PTCVD process is expected to have important future
application in the formation of graphene layers, with the halogen lamps
being replaced with high-power LEDs to allow the more rapid modulation of
the power.
The Surrey research team was led by Prof R.Silva included G.Y.Chen,
B.O.Boskovic, S.Haq and V.Stolojan
References to the research
3. B.O. Boskovic, V. Stolojan, R.U.A. Khan, S. Haq, S.R.P. Silva,
"Large Area Synsthesis of Carbon Nanofibres at Room temperature", Nature
Materials, 1, (2002) 165-168.
5. G.Y. Chen, B. Jensen, V. Stolojan, S.R.P. Silva, "Growth of
carbon nanotubes at temperatures compatible with integrated circuit
technologies", CARBON, 49 (1) (2011) 280-285. doi: 10.1016/j.carbon.2010.09.021
6. Material having a low dielectric constant and method of making
the same patent application number 13/264,885, US 2012/0043640 A1, Filing
date: Apr 16, 2010. Inventors: Sembukuttiarachilage Ravi Pradip Silva,
José Virgilio Anguita Rodriguez Estefania.
Details of the impact
The impact that our research has had can be demonstrated in the
commercial application (described at the end of this section) but also in
the recognition received:
- a Chairman's award from BAE Systems;
- Surrey was awarded a commercialisation award for £250k from SEEDA;
- SNS received a £750k investment from IP Group;
- SNS equipment sales of £1.5M per annum to the global research
community during the start-up phase alone.
The semiconductor industry, whose worth is measured in billions of
dollars, urgently needs new interconnection technology and low-k
dielectrics to maintain the pace of innovation according to Moore's law.
The limitations of existing manufacturing technology threaten the
evolution to next-generation geometry sizes, speeds and power
conservation.
Manufacturers in the semiconductor industry, currently use copper to
provide the vertical interconnections required for integrated circuit (IC)
fabrication. Carbon Nanotubes (CNT) can be structured to act as extremely
efficient conductors, but their adoption as a replacement for copper has
been hindered by the fact that conventionally grown CNTs require
temperatures of around 700 degrees centigrade. This is too high for
semiconductor processing, and leads to the destruction of the microchip
circuitry. In parallel, the semiconductor industry has continuing needs
for better dielectric materials. In this context, better means lower
dielectric constant with solid materials preferred over highly porous
systems. The materials processes must integrate smoothly with the
remaining processes as the technology need is for an incremental change
rather than a disruptive re-engineering.
"SNS's low-k material offers a potential step change for
dielectrics with a k value that meets the requirements of 22 nm
integrated circuit technology" Chair of ITRS Interconnect Working
Group
These two, well-understood industry needs are the primary target market
for Surrey NanoSystems Ltd. The highly innovative PTCVD process, which
provides the ability to grow carbon nanomaterials at low substrate
temperatures, is the technology that underpins SNS. It removes a major
obstacle in using devices such as CNT in next generation microchip
manufacture. SNS was formed in 2008 to commercialise the technology and
has developed it into the world's first "turn-key" NanoGrowthTM
machine for the cost-effective, low-temperature production of precision
aligned multi-wall carbon nanomaterials. The commercial development is
entirely focussed on meeting the International Technology Roadmap for
Semiconductors (ITRS). This is a high-risk, high-reward strategy and is
supported by venture capital.
".....we would consider a film with these verified novel
characteristics as interesting, and would therefore be interested in
further internal evaluation for suitability of potential use [in a
manufacturing process] in the future.....". Manager, Intel Ireland
The NanoGrowthTM machine, provides a fabrication system that
allows CNT structures and low-k dielectrics to be grown at silicon
friendly processing temperatures, that is below 450 degrees C, making
viable a new interconnection process for high-volume semiconductor
manufacture. This is the first commercially available nanomaterial growth
machine that allows the user to easily and precisely control the rapid
growth, quality and characteristics of carbon nanotubes and low-k
dielectrics using fully tested "ingredient mix recipes."
SNS was formed in 2008. The first stage of the business model was based
on developing the market for the NanoGrowthTM machine in
academic and commercial research laboratories. As a result of this
strategy, many research establishments around the world have entered into
partnership agreements with SNS. The second part of the business plan was
to attract further investment and to incorporate the technology more
widely into a range of manufacturing processes. This is now underway,
following the £4.5m of 2nd round funding that was recently
(2012) secured. The company's base is in Newhaven, and has already hired
20 staff to run the activities. Dr G.Y.Chen has transferred from the
University of Surrey as CTO and Prof Silva is CSO and a Board member
together with K.Robson from Surrey's Research and Enterprise Support
office. The new business is still growing, but has already impacted
considerably in the area in terms of providing employment and economic
regeneration.
SNS expects the overall market to grow at approximately 10% per year and
notes that downturns in the sector often see increased spend in R&D.
The key part of the market to SNS is the semiconductor wafer fab
equipment, worth approx. $33bn in 2008 and expected to grow to $41bn by
2012. The low-k materials market in itself was worth over $2.4bn in 2011,
and together with the interconnect market unlocks the $250bn semiconductor
industry IC manufacturers and equipment vendors. SNS has started the
validation process for their equipment to be incorporated in the 2014 IC
cycle which has a 2 year lead time.
Sources to corroborate the impact
C1. CEO Surrey NanoSystems. Contact details provided.
C2. Former Chairman, Surrey NanoSystems. Contact details provided.
C3. Commercialisation potential: IP Group Chairman. Contact
details provided.
C4. ITRS Technology Roadmap Interconnect Working Group
http://www.itrs.net/ITWG/models.html
C5. World expert in CMOS and industry outlook, Manager at INTEL
Ireland. Contact details provided.
C6. Start-Up and University Collaboration category at the Engineer
Technology and Innovation Awards organised by The Engineer magazine, 2007.
C7. Most Entrepreneurial Scientist in the UK, Runners-up, UKSECs
the national network of Enterprise Centres, and Science Alliance, 2006.
C8. Won BAE Chairman's Award in 2004 for Innovations and
Implementation (Room temperature growth of Carbon nanotubes: Dr. Sajad Haq
(Haq, Sajad (UK) [Sajad.Haq@baesystems.com]),
Prof. Ravi Silva)
C9. IEE Innovations in Engineering Award in Emerging Technologies
2005 for Innovations and Contributions to nanotechnology (Prof. Ravi
Silva, University of Surrey)
C10. Shortlisted for ACES-Academic Enterprise Awards — Europe
2010. Runners up in Materials and Chemistry category 2009.